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QO

Qorvo

via Successfactors

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Sr Engineer, Technology Development

Hillsboro, Oregon
Full-time
Posted 12/9/2025
Direct Apply
Key Skills:
Semiconductor device physics
Process development
Device modeling
Data analysis

Compensation

Salary Range

$120K - 200K a year

Responsibilities

Developing GaAs semiconductor devices and process architectures, leading projects from inception to production, and collaborating across technical teams.

Requirements

Minimum 5 years in semiconductor R&D or related experience, with a strong understanding of device physics and process development, and a relevant electrical engineering degree.

Full Description

Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves multiple high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our innovative team is helping connect, protect and power our planet.   We are seeking a candidate to fill a GaAs Technology Device Engineering position, who will develop novel GaAs semiconductor technologies in support of Qorvo products. The person will collaborate regularly with fellow members of various technical teams, to drive the timely development of these technologies. These teams include technology development and integration, process engineering, the yield group, and quality. The candidate will also work closely with the design community to understand the needs of the product teams to ensure that our technologies are supporting their future roadmaps.   This is a hybrid position based in our Hillsboro OR office. The current expectation is to be in the office a minimum of four days a week. However, this is subject to change based on business needs.   Responsibilities: Develop next-generation GaAs semiconductor devices and process architectures for RF communications applications. Primary responsibility will be to be a technical lead on development projects from inception to production release. Must work in a cross functional environment across multiple disciplines including RF design, manufacturing, design automation, and quality. Emphasis is on developing high performance, high yielding, high quality process technologies that support Qorvo’s state-of-the-art products.   Required Qualifications: A minimum of a Bachelors Degree in Electrical Engineering or a related field A minimum of 5 years of design, test, characterization, or Research and Development experience in semiconductor products or an equivalent combination of advanced degree and experience. Deep understanding of device physics, device models, semiconductor processes, and electrical test data. Candidate must excel in a team environment and possess strong communication skills. Preferred Qualifications: Masters or PHD in Electrical Engineering or related field Experience in design of experiments, statistical analysis, CAD layout design, electrical test development, and database query tools.   #LI-NN1        MAKE A DIFFERENCE AT QORVO     We are Qorvo. We do more than create innovative RF and Power solutions for the mobile, defense and infrastructure markets – we are a place to innovate and shape the future of wireless communications. It starts with our employees. As a unified global team, we bring a commitment to excellence, growth and a passion for creating what's next. Explore the possibilities with us. We are an Equal Employment Opportunity (EEO) employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to any characteristics protected by applicable law, including race, color, religion, sex (as defined by law), national origin, age, military or veteran status, genetic information, or disability.

This job posting was last updated on 12/12/2025

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